Publication Information

Title: The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition

Type: Journal

Info: Acta Physica Polonica A, vol.120, no.6A, 2011.

Date: 2011-09-19

DOI: http://yadda.icm.edu.pl/przyrbwn/element/bwmeta1.element.bwnjournal-article-appv120n6ap17kz

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range = 100-500C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Thickness

Ellipsometry

J.A. Woollam

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Asylum Research MFP-3D

Absorption Edges

Optical Transmission

Unknown

Substrates

Si(100)

SiO2

Keywords

Notes

Ultratech Fiji PEALD AlN film study.

167

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