Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Fixed Charge Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Fixed Charge returned 36 record(s).

NumberTitle
1AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
2Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
3Improved understanding of recombination at the Si/Al2O3 interface
4Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
5Trapped charge densities in Al2O3-based silicon surface passivation layers
6Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
7Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
8Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
9Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
10Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
11Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
12Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
13Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
14Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
15Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
16Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
17On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
18Characteristics of HfO2 thin films grown by plasma atomic layer deposition
19Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
20Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
21Passivation effects of atomic-layer-deposited aluminum oxide
22Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
23Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
24Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
25Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
26Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
27Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
28Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
29Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
30Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
31Low-thermal budget flash light annealing for Al2O3 surface passivation
32Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
33Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
34MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
35Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
36Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics