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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science 295 (2014) 260 - 265
Date:
2014-01-06
Author Information
| Name | Institution |
|---|---|
| Taewook Nam | Yonsei University |
| Chang Wan Lee | Yonsei University |
| Hyun Jae Kim | Yonsei University |
| Hyungjun Kim | Yonsei University |
Films
Thermal Ga:ZnO
Hardware used: Atomic Premium CN1
Plasma Ga:ZnO
Hardware used: Atomic Premium CN1
Film/Plasma Properties
Substrates
Keywords
| PEALD Film Development |
| Plasma vs Thermal Comparison |
Notes
| 452 |