Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 295 (2014) 260 - 265
Date:
2014-01-06
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.01.027

Author Information

Name Institution
Taewook NamYonsei University
Chang Wan LeeYonsei University
Hyun Jae KimYonsei University
Hyungjun KimYonsei University

Films

Thermal Ga:ZnO

Hardware used: Atomic Premium CN1
Deposition Temperature Range N/A

Plasma Ga:ZnO

Hardware used: Atomic Premium CN1
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Keywords

PEALD Film Development
Plasma vs Thermal Comparison

Notes

452