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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science 295 (2014) 260 - 265
Date:
2014-01-06
Author Information
| Name | Institution |
|---|---|
| Taewook Nam | Yonsei University |
| Chang Wan Lee | Yonsei University |
| Hyun Jae Kim | Yonsei University |
| Hyungjun Kim | Yonsei University |
Films
Thermal Ga:ZnO
Hardware used: Atomic Premium CN1
Plasma Ga:ZnO
Hardware used: Atomic Premium CN1
Film/Plasma Properties
Substrates
Keywords
| PEALD Film Development |
| Plasma vs Thermal Comparison |
Notes
| 452 |