Publication Information

Title: In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors

Type: Journal

Info: Applied Physics Letters 107, 081608 (2015)

Date: 2015-08-19

DOI: http://dx.doi.org/10.1063/1.4929818

Author Information

Name

Institution

University of Texas at Dallas

University of Texas at Dallas

Films

Plasma Al2O3 using Picosun R200

Deposition Temperature = 200C

75-24-1

7782-44-7

Thermal Al2O3 using Picosun R200

Deposition Temperature = 300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

LEIS, Low Energy Ion Scattering

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Substrates

AlGaN

Keywords

Notes

391

Disclaimer

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