Publication Information

Title: Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

Type: Journal

Info: Journal of Applied Physics 111, 093713 (2012)

Date: 2012-03-29

DOI: http://dx.doi.org/10.1063/1.4709729

Author Information

Name

Institution

Eindhoven University of Technology

Forschungszentrum Jülich

Forschungszentrum Jülich

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 50-400C

75-24-1

7732-18-5

Deposition Temperature Range = 50-400C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Lifetime

Photoconductance

Sinton WCT-100

Substrates

Si(100)

Keywords

Passivation

Plasma vs Thermal Comparison

Notes

Paper available as chapter 8 in on-line thesis.

652

Disclaimer

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