Publication Information

Title: Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

Type: Journal

Info: J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012

Date: 2011-09-30

DOI: http://dx.doi.org/10.1116/1.3664306

Author Information

Name

Institution

Aalto University

Aalto University

University of Jyväskylä

University of Jyväskylä

Aalto University

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature = 200C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Philips Plasmos SD 2300

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Substrates

Si(100)

Keywords

Etch Mask

Etch Resistance

Notes

Beneq TFS-500 PEALD AlN for SF6/O2 plasma etch mask study.

178

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