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Etch Rate Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Etch Rate returned 20 record(s).

NumberTitle
1Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
2Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
3Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
4Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
5A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
6Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
7Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
8PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
9Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
10Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
11A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
12Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
13Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
14High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
15Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
16Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
17Composite materials and nanoporous thin layers made by atomic layer deposition
18Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
19Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
20DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air