Inductively coupled plasma sources from Plasma ALD, LLC.


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Etch Rate Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Etch Rate returned 20 record(s).

NumberTitle
1Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
2Composite materials and nanoporous thin layers made by atomic layer deposition
3Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
4Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
5Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
6Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
7Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
8Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
9Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
10Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
11Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
12A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
13PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
14High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
15Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
16A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
17DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
18Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
19Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
20Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide