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Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide

Type:
Journal
Info:
Nanoscale Research Letters 2015 10:248
Date:
2015-05-28
DOI:
http://dx.doi.org/10.1186/s11671-015-0957-5

Author Information

Name Institution
Nazek El-AtabMasdar Institute of Science and Technology Abu Dhabi
Berk Berkan TurgutUNAM - National Nanotechnology Research Center
Ali Kemal OkyayBilkent University
Osama NayfehUNAM - National Nanotechnology Research Center
Osama NayfehUniversity of Illinois - Urbana/Champaign

Films

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
Deposition Temperature = 195C

Film/Plasma Properties

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Threshold Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Substrates

Si(111)

Notes

360