Publication Information

Title: The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition

Type: Journal

Info: Journal of Nanoscience and Nanotechnology, Volume 12, Number 7, 2012

Date: 2012-07-01

DOI: http://dx.doi.org/10.1166/jnn.2012.6265

Author Information

Name

Institution

Hanyang University

Hynix Semiconductor

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hynix Semiconductor

Hanyang University

Films

Plasma Al2O3 using Custom ICP

Deposition Temperature = 25C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Gas Phase Species

OES, Optical Emission Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

SiO2

Keywords

Low-Temperature

Notes

670

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