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Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
Type:
Conference Proceedings
Info:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
Date:
2016-04-19
Author Information
| Name | Institution |
|---|---|
| Petro Deminskyi | Bilkent University |
| Ali Haider | Bilkent University |
| Necmi Biyikli | Bilkent University |
| A. Ovsianitsky | National Academy of Science of Ukraine |
| O. Tsymbalenko | National Academy of Science of Ukraine |
| D. Kotov | National Academy of Science of Ukraine |
| V. Matkivskyi | National Academy of Science of Ukraine |
| N. Liakhova | National Academy of Science of Ukraine |
| V. Osinsky | National Academy of Science of Ukraine |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si(100) |
Notes
| 871 |