Publication Information

Title: Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

Type: Journal

Info: Semiconductors, April 2014, Volume 48, Issue 4, pp 497-500

Date: 2014-04-17

DOI: http://dx.doi.org/10.1134/S1063782614040204

Author Information

Name

Institution

North Maharashtra University

Films

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

210

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