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Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
Type:
Conference Proceedings
Info:
ECS Transactions, 33 (6) 227-233 (2010)
Date:
2010-10-01
Author Information
| Name | Institution |
|---|---|
| Hiroki Ishizaki | Tokyo University of Science |
| Masataka Iida | Tokyo University of Science |
| Yohei Otani | Tokyo University of Science |
| Yukio Fukuda | Tokyo University of Science |
| Tetsuya Sato | University of Yamanashi |
| Toshiyuki Takamatsu | University of Yamanashi |
| Toshiro Ono | Hirosaki University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1207 |