Publication Information

Title: Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

Type: Journal

Info: Beilstein J. Nanotechnol. 2013, 4, 750-757.

Date: 2013-10-24

DOI: http://dx.doi.org/10.3762/bjnano.4.85

Author Information

Name

Institution

Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)

Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)

Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)

Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)

Films

Thermal In2S3 using Picosun R200

Deposition Temperature Range = 140-240C

14405-45-9

7783-06-4

Deposition Temperature = 200C

14405-45-9

7783-06-4

7732-18-5

Plasma In2(S,O)3 using Picosun R200

Deposition Temperature = 160C

14405-45-9

7783-06-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Empyrean

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Oxford INCA 350 Energy Spectrometer

Thickness

XRR, X-Ray Reflectivity

PANalytical Empyrean

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Unknown

Optical Properties

Optical Transmission

PerkinElmer lambda 900 Spectrophotometer

Optical Properties

Optical Reflectivity

PerkinElmer lambda 900 Spectrophotometer

Band Gap

Optical Absorption

PerkinElmer lambda 900 Spectrophotometer

Thickness

Profilometry

Dektak

Substrates

Glass

Si(100)

Keywords

CIGS

Solar

PEALD Film Development

Notes

O2 plasma radicals appear to exchange for S regardless if it was preceded by an In(acac)3 pulse.

In2(S,O)3 only worked with O2 plasma as O-source.

Picosun SUNALE R-200 mixed thermal and plasma ALD study of In2(O,S)3, In2S3, and In2O3 for CIGS solar cell absorber layer.

165

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