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Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
Type:
Journal
Info:
Journal of Electroceramics, v. 17, n. 2, p. 145--149 (2006)
Date:
2006-08-17
Author Information
| Name | Institution |
|---|---|
| G. X. Liu | Dong-Eui University |
| F. K. Shan | Dong-Eui University |
| J. J. Park | Dong-Eui University |
| Won-Jae Lee | Dong-Eui University |
| G. H. Lee | Dong-Eui University |
| I. S. Kim | Dong-Eui University |
| B. C. Shin | Dong-Eui University |
| Soon-Gil Yoon | Chungnam National University |
Films
Plasma Ga2O3
Plasma GaTiOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1305 |