Publication Information

Title: An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD

Type: Journal

Info: Chem. Vap. Deposition 2008, 14, 296–302

Date: 2008-10-06

DOI: http://dx.doi.org/10.1002/cvde.200806701

Author Information

Name

Institution

CMD Research LLC

Colorado School of Mines

Colorado School of Mines

Colorado School of Mines

Films

Deposition Temperature = 165C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

JEOL JSM-7000F

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

JEOL JSM-7000F

Thickness

Ellipsometry

J.A. Woollam

Refractive Index

Ellipsometry

J.A. Woollam

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Nicolet Nexus 870

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Boonton 76A Capacitance Voltage Meter

Leakage Current

I-V, Current-Voltage Measurements

Tektronix 576 Current Tracer

Substrates

Silicon

ITO

Keywords

Al2O3

Atomic Layer Deposition

Plasma

Pulsed PECVD

Notes

Si wafers had HF-dip.

33

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