Publication Information

Title: Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells

Type: Conference Proceedings

Info: 25th European PV Solar Energy Conference and Exhibition,6-10 September 2010, Valencia, Spain

Date: 2010-09-06

DOI: http://dx.doi.org/10.4229/25thEUPVSEC2010-2DO.2.4

Author Information

Name

Institution

Fraunhofer Institute for Solar Energy Systems (ISE)

Fraunhofer Institute for Solar Energy Systems (ISE)

Fraunhofer Institute for Solar Energy Systems (ISE)

Fraunhofer Institute for Solar Energy Systems (ISE)

Fraunhofer Institute for Solar Energy Systems (ISE)

Fraunhofer Institute for Solar Energy Systems (ISE)

Films

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Minority Carrier Lifetime

QSSPC, Quasi-Steady-State PhotoConductance Decay

WCT120

Emitter Saturation Current Density

Unknown

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Bruker IR Spectrometer

Substrates

Si(100)

Keywords

n-type Silicon Solar Cell

Boron Emitter

Aluminum Oxide Passivation

Blistering

Notes

56

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