Publication Information

Title: Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Type: Journal

Info: Applied Surface Science 282 (2013) 390 - 395

Date: 2013-05-28

DOI: http://dx.doi.org/10.1016/j.apsusc.2013.05.141

Author Information

Name

Institution

Zhejiang University

Zhejiang University

Zhejiang University

Zhejiang University

Zhejiang University

Films

Deposition Temperature Range = 100-300C

557-20-0

7782-44-7

Deposition Temperature Range = 100-300C

557-20-0

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Hall effect/van der Pauw method

BIO-RAD HL5500

Electron Mobility

Hall effect/van der Pauw method

BIO-RAD HL5500

Carrier Concentration

Hall effect/van der Pauw method

BIO-RAD HL5500

Thickness

Ellipsometry

J.A. Woollam M-2000

Thickness

SEM, Scanning Electron Microscopy

FEI Sirion-100

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

FEI Sirion-100

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Empyrean

Photoluminescence

PL, PhotoLuminescence

Acton SpectroPro SP-2500

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Substrates

Si(100)

Glass

Keywords

Resistive Switch

Notes

602

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