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Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 98, 023504 (2005)
Date:
2005-05-27
Author Information
| Name | Institution |
|---|---|
| F. K. Shan | Dong-Eui University |
| G. X. Liu | Dong-Eui University |
| Won-Jae Lee | Dong-Eui University |
| G. H. Lee | Dong-Eui University |
| I. S. Kim | Dong-Eui University |
| B. C. Shin | Dong-Eui University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Optical Properties
Analysis: Optical Transmission
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Si(100) |
| Sapphire |
Notes
| 1261 |