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Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
Type:
Journal
Info:
Energies 2020, 13, 1803
Date:
2020-04-07
Author Information
| Name | Institution |
|---|---|
| Kwan Hong Min | Korea Institute of Energy Research |
| Sungjin Choi | Korea Institute of Energy Research |
| Myeong Sang Jeong | Korea Institute of Energy Research |
| Sungeun Park | Korea Institute of Energy Research |
| Min Gu Kang | Korea Institute of Energy Research |
| Jeong In Lee | Korea Institute of Energy Research |
| Yoonmook Kang | Korea University |
| Dong-Hwan Kim | Korea University |
| Hae-Seok Lee | Korea University |
| Hee-eun Song | Korea Institute of Energy Research |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Characteristic: Lifetime
Analysis: Custom
Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| SiO2 |
Notes
| 1488 |