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Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
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Sr(TMHD)2 · 2H2O, bis(2,2,6,6-tetramethyl-3,5- heptanedionato) strontium dihydrate, CAS# 199445-30-2
Where to buy
| Number | Vendor | Link |
|---|---|---|
| 1 | Strem Chemicals, Inc. | Bis(2,2,6,6-tetramethyl-3,5-heptanedionato) strontium hydrate Sr(TMHD)2 |
Plasma Enhanced Atomic Layer Deposition Film Publications
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Top Authors
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