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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Tris N,N-bis(trimethylsilyl)amide yttrium (III), CAS# 41836-28-6
Where to buy
| Number | Vendor | Region | Link |
|---|---|---|---|
| 1 | Strem Chemicals, Inc. | 🇺🇸 | Tris N,N-bis(trimethylsilyl)amide yttrium (III), min. 98% (99.9%-Y) (REO) |
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Plasma Enhanced Atomic Layer Deposition Film Publications
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