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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Tris N,N-bis(trimethylsilyl)amide yttrium (III), CAS# 41836-28-6
Where to buy
| Number | Vendor | Link |
|---|---|---|
| 1 | Strem Chemicals, Inc. | Tris N,N-bis(trimethylsilyl)amide yttrium (III), min. 98% (99.9%-Y) (REO) |
Plasma Enhanced Atomic Layer Deposition Film Publications
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