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Lifetime Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Lifetime returned 25 record(s).

NumberTitle
1Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
2Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
3Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
4Low-thermal budget flash light annealing for Al2O3 surface passivation
5Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
6Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
7Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
8Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
9Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
10The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells
11Passivation effects of atomic-layer-deposited aluminum oxide
12Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
13Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
14Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
15Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
16Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
17Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
18Improved understanding of recombination at the Si/Al2O3 interface
19Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
20Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
21Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
22In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
23Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
24Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
25Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon