Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022410 (2020)
Date:
2020-01-07
DOI:
http://dx.doi.org/10.1116/1.5134720

Author Information

Name Institution
Shinsuke MiyagawaNagoya University
Kazuhiro GotohNagoya University
Shohei OguraUniversity of Tokyo
Markus WildeUniversity of Tokyo
Yasuyoshi KurokawaNagoya University
Katsuyuki FukutaniUniversity of Tokyo
Noritaka UsamiNagoya University

Films

Thermal TiO2

Hardware used: Arradiance GEMStar-6
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Other TiO2

Hardware used: Arradiance GEMStar-6
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2O, Water
CAS#: 7732-18-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Lifetime
Analysis: Microwave Photoconductance Decay
Diagnostic: Kobelco Research Institute LTA-1512EP

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Quantera II

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Bonding States
Analysis: TDS, Thermal Desorption Spectroscopy
Diagnostic: ESCO TDS 1200 II

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko Instruments SPI 3800N

Substrates

Silicon

Notes

Thermal ALD TiO2 films with and without ex situ H2 plasma treatment
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