DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3, CAS# 6063-89-4

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALSπŸ‡©πŸ‡ͺDimethylaluminum-isopropoxide
2GelestπŸ‡ΊπŸ‡ΈDimethylisopropoxyaluminum
3EpiValenceπŸ‡¬πŸ‡§Aluminium dimethyl isopropoxide
4EreztechπŸ‡ΊπŸ‡ΈAluminum Dimethyl Isopropoxide
5American ElementsπŸ‡ΊπŸ‡ΈAluminum Dimethyl Isopropoxide
6Pegasus ChemicalsπŸ‡¬πŸ‡§Dimethylaluminiumisopropoxide
7Alfa ChemistryπŸ‡ΊπŸ‡ΈDimethylaluminum i-propoxide
8Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈDimethylaluminum i-propoxide, 98% (99.99+%-Al) PURATREM

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 11 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
2Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
3Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
4Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
5Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
6Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
7Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
8Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(ΞΌ-OiPr)]2, as an alternative aluminum precursor
9Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
10Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
11Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride