Publication Information

Title: Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

Type: Journal

Info: Journal of Vacuum Science & Technology A 30, 021505 (2012)

Date: 2012-01-19

DOI: http://dx.doi.org/10.1116/1.3683057

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Air Liquide

Eindhoven University of Technology

Films

Deposition Temperature Range = 25-400C

6063-89-4

7782-44-7

Deposition Temperature Range = 100-400C

6063-89-4

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Refractive Index

Ellipsometry

J.A. Woollam M-2000D

Thickness

Ellipsometry

J.A. Woollam M-2000U

Refractive Index

Ellipsometry

J.A. Woollam M-2000U

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

AccTec BV

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Pfeiffer QMS 200

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Minority Carrier Lifetime

Photoconductance

Sinton WCT-100

Substrates

Silicon

Keywords

Passivation

Notes

662

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