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Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
Type:
Journal
Info:
Journal of Electronic Materials Volume 47, Issue 11, 2018, Pages 6709-6715
Date:
2018-07-26
Author Information
| Name | Institution |
|---|---|
| Tianjun Dai | University of Electronic Science and Technology of China |
| Yixuan Ren | University of Electronic Science and Technology of China |
| Lingxuan Qian | University of Electronic Science and Technology of China |
| Xingzhao Liu | University of Electronic Science and Technology of China |
Films
Plasma MoOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
| Si(111) |
| Quartz |
Notes
| 1615 |