Publication Information

Title: Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition

Type: Journal

Info: J. Vac. Sci. Technol. A 30(2), Mar/Apr 2012

Date: 2012-02-10

DOI: http://dx.doi.org/10.1116/1.3684597

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

Films

Plasma RuTaN using Custom

Deposition Temperature Range N/A

0-0-0

169896-41-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Dynamitron linear particle accelerator

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

JEOL 2010F

Conformality, Step Coverage

FIB, Focused Ion Beam

Unknown

Morphology, Roughness, Topography

STM, Scanning Tunneling Microscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Autoprobe CP

Substrates

SiO2

Keywords

Copper Electroplating

Interconnect

Diffusion Barrier

Notes

150C forming gas anneal

71

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