Publication Information

Title: Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2

Type: Journal

Info: Journal of the Korean Physical Society, March 2015, Volume 66, Issue 5, pp 821-827

Date: 2015-03-21

DOI: http://arxiv.org/ftp/arxiv/papers/1408/1408.1252.pdf

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

POSCO

Hanyang University

Films

Plasma Ni using Custom ICP

Deposition Temperature Range = 150-300C

0-0-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Thickness

SEM, Scanning Electron Microscopy

Unknown

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Substrates

Si(100)

Keywords

Silicide

Notes

The Si substrate was cleaned with a dilute HF solution (HF : H2O = 1 : 50) for 2 minutes to remove native oxide.

Custom ICP RPALD Ni for silicide formation study.

301

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