Publication Information

Title: Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Type: Journal

Info: Journal of Vacuum Science & Technology A 33, 031512 (2015)

Date: 2015-04-03

DOI: http://dx.doi.org/10.1116/1.4917552

Author Information

Name

Institution

Otto-von-Guericke University

Otto-von-Guericke University

Otto-von-Guericke University

Otto-von-Guericke University

IHP

Sentech Instruments GmbH

Otto-von-Guericke University

Films

Deposition Temperature Range = 25-150C

4375-83-1

7782-44-7

Deposition Temperature = 200C

594-10-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

SENTECH SE 850

Resistivity, Sheet Resistance

Four-point Probe

CDE ResMap 168

Compositional Depth Profiling

SIMS, Secondary Ion Mass Spectrometry

Cameca IMS Wf SIMS

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Physical Electronics PHI 5600 ESCA

Images

SEM, Scanning Electron Microscopy

Unknown

Substrates

Keywords

Notes

358

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