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CET, capacitance equivalent thickness Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing CET, capacitance equivalent thickness returned 19 record(s).

Number	Title
1	Suppression of GeO_x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
2	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
3	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO₂ Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
4	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
5	Effective work function tunability and interfacial reactions with underlying HfO₂ layer of plasma-enhanced atomic layer deposited TaC_xN_y films
6	Plasma-Enhanced Atomic Layer Deposition of SrTa₂O₆ Thin Films Using Sr[Ta(OC₂H₅)₅(OC₂H₄OCH₃)]₂ as Precursor
7	In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
8	Growth characteristics and electrical properties of La₂O₃ gate oxides grown by thermal and plasma-enhanced atomic layer deposition
9	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
10	Low EOT GeO₂/Al₂O₃/HfO₂ on Ge substrate using ultrathin Al deposition
11	Improved Electrical Properties of Crystalline ZrO₂/Al₂O₃ Buffer Gate Stack with Double Nitridation
12	An improvement of HfO₂/Ge interface by in situ remote N₂ plasma pretreatment for Ge MOS devices
13	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO₂
14	Oxygen migration in TiO₂-based higher-k gate stacks
15	Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr_xTi_yO_z films
16	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO₂ layer
17	HfO₂/HfO_xN_y/HfO₂ Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
18	Improvement in electrical characteristics of HfO₂ gate dielectrics treated by remote NH₃ plasma
19	Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al₂O₃ Gate Dielectrics by CF₄ Plasma Treatment