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Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
Type:
Journal
Info:
2014 International Conference on Solid State Devices and Materials
Date:
2014-09-08
Author Information
| Name | Institution |
|---|---|
| Nicolò Ronchi | IMEC |
| Brice De Jaeger | IMEC |
| Marleen Van Hove | IMEC |
| Robin Roelofs | ASM Microchemistry Oy |
| Tian-Li Wu | IMEC |
| Jie Hu | IMEC |
| X. Kang | IMEC |
| Stefaan Decoutere | IMEC |
Films
Plasma SiNx
Hardware used: ASM Eagle XP8
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| AlGaN |
Notes
| 1009 |