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Fixed Charge Density Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Fixed Charge Density returned 16 record(s).

Number	Title
1	Negative charge trapping effects in Al₂O₃ films grown by atomic layer deposition onto thermally oxidized 4H-SiC
2	Evaluating the Impact of Thermal Annealing on Al₂O₃/c-Si Interface Properties by Non-Destructive Measurements
3	Localized defect states and charge trapping in atomic layer deposited-Al₂O₃ films
4	Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
5	Plasma-assisted atomic layer deposition of TiN/Al₂O₃ stacks for metal-oxide-semiconductor capacitor applications
6	Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
7	Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
8	Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p⁺ Regions
9	The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfO_xN_y prepared by in situ nitridation
10	Nanochemistry, nanostructure, and electrical properties of Ta₂O₅ film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
11	Characterization of thin Al₂O₃/SiO₂ dielectric stack for CMOS transistors
12	Status and prospects of Al₂O₃-based surface passivation schemes for silicon solar cells
13	Thermal Stability of ALD HfO₂ Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
14	Simulation and Fabrication of HfO₂ Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
15	Capacitance and conductance versus voltage characterization of Al₂O₃ layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
16	Controlling the fixed charge and passivation properties of Si(100)/Al₂O₃ interfaces using ultrathin SiO₂ interlayers synthesized by atomic layer deposition