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Island Coalescence during Film Growth: An Underestimated Limitation of Cu ALD

Type:
Journal
Info:
Adv. Mater. Interfaces 2017, 4, 1700274
Date:
2017-05-02
DOI:
https://doi.org/10.1002/admi.201700274

Author Information

Name Institution
Dirk J. HagenAalto University
James ConnollyApplied Materials
Ian M. PoveyTyndall National Institute, University College Cork
S. RushworthEpiValence Ltd
Martin E. PembleTyndall National Institute, University College Cork

Films

Plasma Cu

Hardware used: Applied Materials 300mm ALD
CTA-1, Adeka Corporation Proprietary Cu(II)-aminoalkoxide
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 30-60C

Plasma Cu

Hardware used: Applied Materials 300mm ALD
Abacus
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Quanta 650 FEG

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Substrates

Silicon
TaN
CDO, Carbon Doped Oxide
Al2O3
Ru
Pd

Notes

1641