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New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping

Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(1), Jan/Feb 2013
Date:
2012-11-27
DOI:
http://dx.doi.org/10.1116/1.4768172

Author Information

Name Institution
Matthew A. ThomasUniversity of Arkansas at Little Rock
Johnathan C. ArmstrongUniversity of Arkansas at Little Rock
J.B. CuiUniversity of Arkansas at Little Rock

Films

Other ZnO

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Thermal ZnO

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7000F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Optical Properties
Analysis: PL, PhotoLuminescence
Diagnostic: Horiba Jobin Yvon 320 Spectrometer

Characteristic: Electrical Properties
Analysis: Hall Measurements
Diagnostic: Keithley 7065 Hall Effect Card

Substrates

Glass
Si(100)
SiO2

Notes

PET-ALD: plasma enhanced thermal ALD with H2O thermal followed by H2 plasma.
Aluminum doping of ZnO better with DMAI than TMA.
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