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Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 49, No. 3, pp. 1303-1306
Date:
2005-11-22
DOI:
http://www.jkps.or.kr/journal/view.html?uid=7961&vmd=Full

Author Information

Name Institution
Beom-Yong KimHanyang University
Myoung-Gyun KoHanyang University
Eun-Joo LeeHanyang University
Min-Soo HongHanyang University
You-Jin JeonHanyang University
Jong-Wan ParkHanyang University

Films

Plasma La2O3

Hardware used: Custom ECR
La(EtCp)3, tris(ethylcyclopentadienyl) lanthanum
CAS#: 404009-15-0
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 150-450C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

Si(100)

Notes

1186