Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Atomic layer epitaxy of germanium

Type:
Journal
Info:
Applied Surface Science 82-83 (1994) 380-386
Date:
1994-06-30
DOI:
https://doi.org/10.1016/0169-4332(94)90245-3

Author Information

Name Institution
Satoshi SugaharaTokyo Institute of Technology
Takuya KitamuraTokyo Institute of Technology
Toshinori ImaiTokyo Institute of Technology
Masakiyo MatsumuraTokyo Institute of Technology

Films

Plasma Ge

Hardware used: Custom Hot-wire
DMG, Dimethylgermane, Me2GeH2
CAS#: 1449-64-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 480C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: -

Substrates

Ge
SiO2

Notes

1600