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Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 62, No. 8, pp. 1143--1149
Date:
2013-05-08
DOI:
http://dx.doi.org/10.3938/jkps.62.1143

Author Information

Name Institution
Chang Young KimJeju National University
Hong Seok LeeJeju National University
Chi Kyu ChoiJeju National University
Young Hun YuJeju National University
R. NavamathavanChonbuk National University
Heon Ju LeeJeju National University

Films

Plasma SiCOH

Hardware used: Unknown
DiMethoxyDiMethylSilane DMDMS, (CH3)2(OCH3)2Si
CAS#: 1112-39-6
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature Range N/A

Plasma SiCOH

Hardware used: Unknown
DiMethoxyDiMethylSilane DMDMS, (CH3)2(OCH3)2Si
CAS#: 1112-39-6
Ar, Argon
CAS#: 7440-37-1
Cyclohexene oxide
CAS#: 286-20-4
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Gaertner L116D

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6701F

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6701F

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker IR Spectrometer

Substrates

Silicon

Notes

I am not exactly sure what is going on in the process described in the paper.
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