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Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

Type:
Journal
Info:
Applied Physics Letters 90, 213509 (2007)
Date:
2007-05-02
DOI:
http://dx.doi.org/10.1063/1.2742791

Author Information

Name Institution
Han-Bo-Ram LeePohang University of Science and Technology (POSTECH)
J. Y. SonPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Plasma Co

Hardware used: Custom
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(001)

Notes

1016