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Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment

Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 177 - 182
Date:
1992-06-02
DOI:
https://doi.org/10.1016/0040-6090(93)90151-E

Author Information

Name Institution
A. MahajanUniversity of Texas at Austin
J. IrbyUniversity of Texas at Austin
D. KinoskyUniversity of Texas at Austin
R. QianUniversity of Texas at Austin
S. ThomasUniversity of Texas at Austin
Sourish BanerjeeUniversity of Texas at Austin
A. TaschUniversity of Texas at Austin
T. PicrauxSandia National Laboratories

Films

Plasma Si

Hardware used: Custom Remote Inductively Coupled Plasma
Disilane, Si2H6
CAS#: 1590-87-0
He, Helium
CAS#: 7440-59-7
Deposition Temperature Range = 250-400C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Diagnostic: -

Characteristic: Ion Flux
Analysis: Langmuir Probe
Diagnostic: -

Characteristic: Plasma Potential
Analysis: Langmuir Probe
Diagnostic: -

Substrates

Si(100)

Notes

1408