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Plasma-Assisted Atomic Layer Deposition of Palladium

Type:
Journal
Info:
Chem. Vap. Deposition 2005, 11, No. 1
Date:
2004-06-01
DOI:
http://dx.doi.org/10.1002/cvde.200306312

Author Information

Name Institution
Gregory A. Ten EyckRensselaer Polytechnic Institute (RPI)
Jay J. SenkevichRensselaer Polytechnic Institute (RPI)
Fu TangRensselaer Polytechnic Institute (RPI)
Deli LiuRensselaer Polytechnic Institute (RPI)
Samuk PimanpangRensselaer Polytechnic Institute (RPI)
Tansel KarabackRensselaer Polytechnic Institute (RPI)
Gwo-Ching WangRensselaer Polytechnic Institute (RPI)
Toh-Ming LuRensselaer Polytechnic Institute (RPI)
Christopher JezewskiState University of New York at Albany
W. A. LanfordState University of New York at Albany

Films

Plasma Pd

Hardware used: Custom Remote Inductively Coupled Plasma
palladium(II) hexafluoroacetylacetonate, Pd(hfac)2
CAS#: 64916-48-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 80C

Film/Plasma Properties

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Autoprobe CP

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Diagnostic: -

Substrates

Silicon
W
Ir

Notes

1179