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Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

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Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 1, PP. 4-7, 2016
Date:
2015-11-04

Author Information

Name Institution
Jaewoo ShimSungkyunkwan University
Gwangwe YooSungkyunkwan University
Dong-Ho KangSungkyunkwan University
Woo-Shik JungSungkyunkwan University
Young-Chul ByunSungkyunkwan University
Hyoungsub KimSungkyunkwan University
Won Tae KangSungkyunkwan University
Woo Jong YuSungkyunkwan University
Hyun-Yong YuSungkyunkwan University
Yongkook ParkSungkyunkwan University
Jin-Hong ParkSungkyunkwan University

Films

Plasma Al2O3

Hardware used: Unknown


Plasma TiO2

Hardware used: Unknown


Film/Plasma Properties

Substrates

Notes

544