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Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 9, PP. 1084-1087, 2016
Date:
2016-07-11
DOI:
http://dx.doi.org/10.1109/LED.2016.2589661

Author Information

Name Institution
Y. KikuchiIMEC
T. ChiarellaIMEC
D. De RoestASM Microchemistry Oy
Timothee BlanquartASM Microchemistry Oy
A. De KeersgieterIMEC
K. KenisIMEC
Antony Premkumar PeterIMEC
P. OngIMEC
E. Van BesienIMEC
Z. TaoIMEC
M. S. KimIMEC
S. KubicekIMEC
S. A. ChewIMEC
T. SchramIMEC
Steven DemuynckIMEC
D. MocutaIMEC
D. MocutaIMEC
N. HoriguchiIMEC

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

833