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CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories

Type:
Journal
Info:
Adv. Elec. Matls. Vol 8, Iss 7 July 2022 2101258
Date:
2022-02-15
DOI:
https://doi.org/10.1002/aelm.202101258

Author Information

Name Institution
Zhouchangwan YuStanford University
Balreen SainiStanford University
Pei-Jean LiaoTaiwan Semiconductor Manufacturing Company
Yu-Kai ChangTaiwan Semiconductor Manufacturing Company
Duen-Huei HouTaiwan Semiconductor Manufacturing Company
Chih-Hung NienTaiwan Semiconductor Manufacturing Company
Yu-Chuan ShihTaiwan Semiconductor Manufacturing Company
Sai Hooi YeongTaiwan Semiconductor Manufacturing Company
Valeri Afanas'evKU Leuven
Fei HuangStanford University
John D. BanieckiSLAC National Accelerator Laboratory
Apurva MehtaSLAC National Accelerator Laboratory
Chih-Sheng ChangTaiwan Semiconductor Manufacturing Company
H.-S. P. WongStanford University
Wilman TsaiStanford University
Paul C. McIntyreStanford University

Films

Plasma Ce:HfZrO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

1697