About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

Type:
Conference Proceedings
Info:
2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Date:
2017-05-22
DOI:
http://dx.doi.org/10.23919/MIPRO.2017.7973391

Author Information

Name Institution
Erlend RolsethUniversitat Stuttgart
Andreas BlechUniversitat Stuttgart
Inga Anita FischerUniversitat Stuttgart
Y. HashadUniversitat Stuttgart
R. KoernerUniversitat Stuttgart
K. KosteckiUniversitat Stuttgart
A. KruglovUniversitat Stuttgart
V. S. Senthil SrinivasanUniversitat Stuttgart
M. WeiserUniversitat Stuttgart
T. WendavHumboldt-Universität zu Berlin
Kurt BuschHumboldt-Universität zu Berlin
Jörg SchulzeUniversitat Stuttgart

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Silicon
Ge
GeSn

Notes

1075