Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen

Type:
Journal
Info:
Applied Physics Letters 64, 884-886 (1994)
Date:
1993-12-09
DOI:
http://dx.doi.org/10.1063/1.110984

Author Information

Name Institution
D. D. KoleskeIBM
S. M. GatesIBM

Films

Plasma Si

Hardware used: Custom
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Diagnostic: -

Substrates

Ge
SiGe

Notes

1193