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Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl

Type:
Journal
Info:
Journal of The Electrochemical Society, 154 (10) H899-H903 (2007)
Date:
2007-06-17

Author Information

Name Institution
Keunwoo LeeHanyang University
Keunjun KimHanyang University
Taeyong ParkHanyang University
Hyeongtag JeonHanyang University
Youngjin LeeHynix Semiconductor
Jeongtae KimHynix Semiconductor
Seungjin YeomHynix Semiconductor

Films

Plasma Co

Hardware used: Custom


CAS#: 1333-74-0

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Notes

1011