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Dynamic threshold voltage influence on Ge pMOSFET hysteresis

Type:
Journal
Info:
2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)
Date:
2015-09-01
DOI:
http://dx.doi.org/10.1109/SBMicro.2015.7298118

Author Information

Name Institution
A.V. OliveiraUniversity of Sao Paulo
P.G.D. AgopianUniversity of Sao Paulo
Joao Antonio MartinoUniversity of Sao Paulo
Eddy SimoenIMEC
Cor ClaeysIMEC
Hans MertensIMEC
Nadine CollaertIMEC
A. TheanIMEC

Films

Other Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal HfO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Ge

Notes

454