Performance of AlGaN/GaN MISHFET using dual-purpose thin Al₂O₃ layer for surface protection and gate insulator

Type:

Journal

Info:

Solid-State Electronics 100 (2014) 11-14

Date:

2014-05-24

DOI:

http://dx.doi.org/10.1016/j.sse.2014.05.007

Author Information

Name	Institution
Do-Kywn Kim	Kyungpook National University

Hardware used: Unknown

Deposition Temperature = 450C

219