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Comparison of passivation layers for AlGaN/GaN high electron mobility transistors

Type:

Journal

Info:

J. Vac. Sci. Technol. B 29, 061204 (2011)

Date:

2011-10-27

DOI:

http://dx.doi.org/10.1116/1.3656390

Author Information

Name	Institution
R. C. Fitch	U.S. Air Force Research Laboratory
D. E. Walker Jr.	U.S. Air Force Research Laboratory
K. D. Chabak	U.S. Air Force Research Laboratory
J. K. Gillespie	U.S. Air Force Research Laboratory
M. Kossler	U.S. Air Force Research Laboratory
M. Trejo	U.S. Air Force Research Laboratory
A. Crespo	U.S. Air Force Research Laboratory
Lu Liu	University of Florida
T. S. Kang	University of Florida
C-F Lo	University of Florida
Fan Ren	University of Florida
D. J. Cheney	University of Florida
S. J. Pearton	University of Florida

Films

Thermal Al₂O₃

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

Deposition Temperature Range N/A

Thermal HfO₂

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

AlGaN

Notes

Comparison of HEMT performance vs different passivation schemes PECVD SiN_x and thermal ALD Al₂O₃ and HfO₂.
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