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Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability

Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2018 volume 7, issue 2, N1-N6
Date:
2017-12-18
DOI:
http://dx.doi.org/10.1149/2.0461712jss

Author Information

Name Institution
M. N. BhuyianNew Jersey Institute of Technology
P. ShaoNew Jersey Institute of Technology
A. SenguptaHeritage Institute of Technology
Y. DingNew Jersey Institute of Technology
D. MisraNew Jersey Institute of Technology
K. TapilyTokyo Electron America, Inc.
R. D. ClarkTokyo Electron America, Inc.
Steven ConsiglioTokyo Electron America, Inc.
C. S. WajdaTokyo Electron America, Inc.
G. J. LeusinkTokyo Electron America, Inc.

Films

Other HfZrO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Al2O3

Notes

1124